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Apr 29, 2003· An Indium/Gallium/Arsenide (InGaAs) detector having avalanche photodiodes (APD's) and pin photodiodes on a single chip is provided. A method of ...
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Indium gallium arsenide Indium gallium arsenide (InGaAs) is a semiconductor composed of indium, gallium and arsenic. It is used in highpower and
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An infrared detector is disclosed having a first substrate made of indium phosphide and a first layer formed on the first substrate and made of indium gallium arsenide.
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Development of an Indium Gallium Arsenide (InGaAs) Short Wave Infrared (SWIR) Line Scan Imaging System by David Chiu and Troy Alexander ARLTR5713 September 2011
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Abstract Sensors Unlimited, Inc. has developed focal pane arrays (FPAs) fabricated with indium gallium arsenide (InGaAs) photodiode arrays and silicon CMOS readout ...
From Wikipedia, the free encyclopedia. Indium gallium arsenide (InGaAs) is a semiconductor composed of indium, gallium and arsenic. It is used in highpower and high ...
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Although thermal imaging has been well established for military night vision, indium gallium arsenide (InGaAs)based shortwave infrared imaging (SWIR) is quietly ...
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Indium gallium arsenide (InGaAs) is a semiconductor composed of indium, gallium and arsenic. It is used in highpower and highfrequency electronics because of its ...